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1/11 may 2004 high speed: t pd = 7ns (typ.) at v cc =6v low power dissipation: i cc =1 a(max.) at t a =25c low "on" resistance: r on =50 ? typ. at v cc =9v,i i/o =100 a wide operating voltage range v cc (opr) = 2v to 12v sine wave distortion: 0.042% at v cc =4vf=1khz high noise immunity: v nih =v nil = 28% v cc (min.) pin and function compatible with 54 series 4066 space grade-1: esa scc qualified 50 krad qualified, 100 krad available on request no sel under high let heavy ions irradiation device fully compliant with scc-9408-052 description the m54HC4066 is an high speed cmos quad bilateral switch fabricated with silicon gate c 2 mos technology. the c input is provided to control the switch; the switch is on when the c input is held high and off when c is held low. m54HC4066 pin connection order codes package fm em dilc m54HC4066d m54HC4066d1 fpc m54HC4066k m54HC4066k1 rad-hard quad bilateral switch dilc-14 fpc-14 rev. 1
m54HC4066 2/11 figure 1: iec logic symbols figure 2: logic diagram table 1: pin description table 2: truth table table 3: absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied pin n symbol name and function 1, 4, 8, 11 1 to 4 i/o independent inputs/out- puts 2, 3, 9, 10 1 to 4 o/i independent outputs/ inputs 13,5,6,12 1cto4c enableinputs(active high) 7 gnd ground (0v) 14 v cc positive supply voltage control switch function hon loff symbol parameter value unit v cc supply voltage -0.5 to +13 v v in dc input voltage -0.5 to v cc +0.5 v v i/o dc input/output voltage -0.5 to v cc +0.5 v i ok control input dc diode current 20 ma i iok i/o dc diode current 20 ma i o dc output source sink current per output pin 25 ma i cc or i gnd dc v cc or ground current 50 ma p d power dissipation 300 mw t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 265 c
m54HC4066 3/11 table 4: recommended operating conditions table 5: dc specifications symbol parameter value unit v cc supply voltage 2to12 v v in input voltage (control) 0 to v cc v v i/o i/o voltage 0 to v cc v t op operating temperature -55 to 125 c t r ,t f input rise and fall time v cc =2.0v 0to1000 ns v cc =4.5v 0 to 500 v cc =6.0v 0 to 400 v cc =10.0v 0 to 250 symbol parameter test condition value unit v cc (v) t a =25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v ihc high level control input voltage 2.0 1.5 1.5 1.5 v 4.5 3.15 3.15 3.15 9.0 6.3 6.3 6.3 12.0 8.4 8.4 8.4 v ilc low level control input voltage 2.0 0.5 0.5 0.5 v 4.5 1.35 1.35 1.35 9.0 2.7 2.7 2.7 12.0 3.6 3.6 3.6 r on on resistance 4.5 v i =v ihc v i/o =v cc to gnd i i/o 1ma 96 170 200 250 ? 9.0 55 85 100 150 12.0 45 80 90 120 4.5 v i =v ihc v i/o =v cc or gnd i i/o 1ma 70 100 130 160 9.0 50 75 95 115 12.0 45 70 90 110 ? r on difference of on resistance between switches 4.5 v i =v ihc v i/o =v cc or gnd i i/o 1ma 10 ? 9.0 5 12.0 5 i off input/output leakage current (switch off) 12.0 v os =v cc or gnd v is =v cc or gnd v in =v ilc 0.1 1 2 a i iz switch input leakage current (switch on, output open) 12.0 v os =v cc or gnd v in =v ihc 0.1 1 2 a i in control input current 6.0 v i =v cc or gnd 0.1 1 1 a i cc quiescent supply current 6.0 v i =v cc or gnd 11020 a 9.0 4 40 80 12.0 8 80 160
m54HC4066 4/11 table 6: ac electrical characteristics (c l = 50 pf, input t r =t f = 6ns) table 7: capacitive characteristics 1) c pd is defined as the value of the ic?s internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) =c pd xv cc xf in +i cc symbol parameter test condition value unit v cc (v) t a =25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. i/o phase difference between input and output 2.0 10 50 65 75 ns 4.5 4 10 13 15 9.0 3 8 10 13 12.0 3 7 9 10 t pzl t pzh output enable time 2.0 r l =1k ? 18 100 125 150 ns 4.5 8 20 25 30 9.0 6 12 22 27 12.0 6 12 18 25 t plz t phz output disable time 2.0 r l =1k ? 20 115 145 175 ns 4.5 10 23 29 35 9.0 8 20 25 30 12.0 8 18 22 27 maximum control input frequency 2.0 r l =1k ? c l =15pf v out =1/2v cc 30 mhz 4.5 30 9.0 30 12.0 30 symbol parameter test condition value unit v cc (v) t a =25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. c in input capacitance 5 10 10 10 pf c i/o switch terminal capacitance 6pf c ios feed through capacitance 0.5 pf c pd power dissipation capacitance (note 1) 15 pf
m54HC4066 5/11 table 8: analog switch characteristics (gnd = 0v;t a = 25c) symbol parameter test condition value unit v cc (v) v in (v p-p ) typ. sine wave distortion (thd) 4.5 4 f in =1khzr l =10k ? ,c l =50pf 0.05 % 9.0 8 0.04 f max frequency response (switch on) 4.5 adjust f in voltage to obtain 0 dbm at v os . increase f in frequency until db meter reads -3db r l =50 ? ,c l =10pf 200 mhz 9.0 200 feed through attenuation (switch off) 4.5 v in is centered at v cc /2. adjust input for 0 dbm r l = 600 ? c l =50pf,f in =1mhzsinewave -60 db 9.0 -60 crosstalk (control input to signal output) 4.5 r l = 600 ? ,c l =50pf,f in = 1mhz square wave (t r =t f =6ns) 60 mv 9.0 100 crosstalk (between any switches) 4.5 adjust v in to obtain 0 dbmat input r l = 600 ? ,c l =50pf,f in =1mhzsinewave -60 db 9.0 -60
m54HC4066 6/11 figure 3: switching characteristics test circuit crosstalk (control to output) bandwidth and feedthrough attenuation crosstalk between any two switches maximum control frequency
m54HC4066 7/11 figure 4: channel resistance (r on) figure 5: i cc (opr.)
m54HC4066 8/11 dim. mm. inch min. typ max. min. typ. max. a 2.1 2.54 0.083 0.100 a1 3.00 3.70 0.118 0.146 a2 0.63 0.88 1.14 0.025 0.035 0.045 b 1.82 2.03 2.39 0.072 0.080 0.094 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 d 18.79 19.00 19.20 0.740 0.748 0.756 e 7.36 7.62 7.87 0.290 0.300 0.310 e 2.54 0.100 e1 15.11 15.24 15.37 0.595 0.600 0.605 e2 7.62 7.87 8.12 0.300 0.310 0.320 f 7.11 7.75 0.280 0.305 i 3.70 0.146 k 10.90 12.1 0.429 0.476 l 1.14 1.27 1.5 0.045 0.050 0.059 dilc-14 mechanical data 0016173h
m54HC4066 9/11 dim. mm. inch min. typ max. min. typ. max. a 6.75 6.91 7.06 0.266 0.272 0.278 b 9.76 9.95 10.14 0.384 0.392 0.399 c 1.49 1.95 0.059 0.077 d 0.10 0.127 0.15 0.004 0.005 0.006 e 7.50 7.62 7.75 0.295 0.300 0.305 f 1.27 0.050 g 0.38 0.43 0.48 0.015 0.017 0.019 h 6.0 0.236 l 18.75 22.0 0.738 0.866 m 0.38 0.015 n 4.31 0.170 fpc-14 mechanical data 016029e 1 7 8 14 f g d h a b m n h c l e
m54HC4066 10/11 table 9: revision history date revision description of changes 14-may-2004 1 first release
m54HC4066 11/11 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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